tsm5nd50 500v n-channel power mosfet 1/9 version: f11 to - 251 (ipak) to - 252 (dpak) product summary v ds (v) r ds(on) ( ) i d (a) 500 1.5 @ v gs =10v 2.2 general description the tsm5nd50 n-channel enhancement mode power mosfe t is produced by planar stripe dmos technology. this advanced technology has been espec ially tailored to minimize on-state resistance, pro vide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency s witch mode power supply, power factor correction, e lectronic lamp ballast based on half bridge. features low gate charge typical @ 20nc low crss typical @ 17pf fast switching improved dv/dt capability esd protection block diagram n-channel mosfet ordering information part no. package packing tsm5nd50cp rog to-252 2,500pcs / 13 reel tsm5nd50ch c5g to-251 75pcs / tube note: g denotes for halogen free absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 500 v gate-source voltage v gs 30 v continuous drain current i d 4.4 a pulsed drain current i dm 17.6 a continuous source current (diode conduction) i s 4.4 a peak diode recovery (note 2) dv/dt 4.5 v/ns single pulse drain to source avalanche energy (note 3) e as 130 mj total power dissipation @ta = 25 o c p dtot 70 w operating junction and storage temperature range t j , t stg -55 to +150 o c thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 1.78 o c/w thermal resistance - junction to ambient r ? ja 62.5 o c/w notes: surface mounted on fr4 board t 10sec pin definition : 1. gate 2. drain 3. source
tsm5nd50 500v n-channel power mosfet 2/9 version: f11 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 500 -- -- v drain-source on-state resistance v gs = 10v, i d = 2.2a r ds(on) -- 1.2 1.5 gate threshold voltage v ds = v gs , i d = 50ua v gs(th) 3.0 -- 4.8 v zero gate voltage drain current v ds = 500v, v gs = 0v i dss -- -- 1 ua gate body leakage v gs = 20v, v ds = 0v i gss -- -- 10 ua forward transconductance v ds = 15v, i d = 2.2a g fs -- 3.1 -- s dynamic b total gate charge v ds = 250v, i d = 4.4a, v gs = 10v q g -- 20 -- nc gate-source charge q gs -- 4 -- gate-drain charge q gd -- 10 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 535 -- pf output capacitance c oss -- 75 -- reverse transfer capacitance c rss -- 17 -- switching c turn-on delay time v gs = 10v, i d = 4.4a, v dd = 250v, r g = 25 t d(on) -- 21.6 -- ns turn-on rise time t r -- 11.7 -- turn-off delay time t d(off) -- 14.5 -- turn-off fall time t f -- 4.5 -- source drain diode source-drain current i sd -- -- 4.4 a diode forward voltage i s = 4.4a, v gs = 0v v sd -- 0.82 1.2 v reverse recovery time v dd = 30v, i sd = 4.4a, di f /dt = 100a/us. t j =150oc t rr -- 310 -- ns reverse recovery charge q rr -- 1425 -- nc reverse recovery current i rrm -- 9.2 -- a notes: 1. pulse test: pulse width 300us, duty cycle 2% 2. i sd <4.4a, di/dt<200a/us, vdd tsm5nd50 500v n-channel power mosfet 3/9 version: f11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm5nd50 500v n-channel power mosfet 4/9 version: f11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage maximum safe operating area normalized thermal transient impedance, junction-to -ambient
tsm5nd50 500v n-channel power mosfet 5/9 version: f11 unclamped inductive load test circuit and waveform switching time test circuits for resistive load gate charge test circuit
tsm5nd50 500v n-channel power mosfet 6/9 version: f11 test circuit for inductive load switching and diode recovery times
tsm5nd50 500v n-channel power mosfet 7/9 version: f11 to-251 mechanical drawing marking diagram y = year code m = month code for halogen fr ee product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code to-251 dimension dim millimeters inches min max min max a 2.10 2.50 0.083 0.098 b 0.65 1.05 0.026 0.041 b1 0.58 0.62 0.023 0.024 b2 4.80 5.20 0.189 0.205 b3 0.68 0.72 0.027 0.028 c 0.35 0.65 0.014 0.026 c1 0.40 0.60 0.016 0.024 d 5.30 5.70 0.209 0.224 e 6.30 6.70 0.248 0.264 e 2.30 bsc 0.09 bsc l 7.00 8.00 0.276 0.315 l1 1.40 1.80 0.055 0.071 l2 1.30 1.70 0.051 0.067 l3 0.50 0.90 0.020 0.035
tsm5nd50 500v n-channel power mosfet 8/9 version: f11 to-252 mechanical drawing marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code to-252 dimension dim millimeters inches min max min max a 2.30 bsc 0.090 bsc b 10.20 10.80 0.402 0.425 c 5.30 5.70 0.209 0.224 d 6.30 6.70 0.248 0.264 e 2.10 2.50 0.083 0.098 f 0.00 0.20 0.000 0.008 g 4.80 5.20 0.189 0.205 g1 0.40 0.80 0.016 0.031 h 0.40 0.60 0.016 0.024 h1 0.35 0.65 0.014 0.026 j 3.35 3.65 0.132 0.144 k 0.50 1.10 0.020 0.043 l 0.90 1.50 0.035 0.059 m 1.30 1.70 0.051 0.067
tsm5nd50 500v n-channel power mosfet 9/9 version: f11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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